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We report a simple and mass-scalable approach for thin MoS 2  films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS 2  target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS 2  film. The mobility value of ~29 cm 2 /Vs and current on/off ratio on the order of ~10 4  were obtained for bilayer MoS 2 . The mobility increased up to ~173–181 cm 2 /Vs, respectively, for few-layer MoS 2 . The mobility of our bilayer MoS 2  FETs is larger than any previously reported values of single to bilayer MoS 2  grown on SiO 2 /Si substrate with a SiO 2  gate oxide. Moreover, our few-layer MoS 2  FETs exhibited the highest mobility value ever reported for any MoS 2  FETs with a SiO 2  gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoO x Si y  layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS 2  film.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method