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Increasing SET operation speed and reducing RESET operation energy have always been the innovation direction of phase change memory (PCM) technology. Here, we demonstrate that ∼87% and ∼42% reductions of RESET operation energy can be achieved on PCM cell based on stoichiometric Ti 1 Sb 2 Te 5  alloy, compared with Ge 2 Sb 2 Te 5  and non-stoichiometric Ti 0.4 Sb 2 Te 3  based PCM cells at the same size, respectively. The Ti 1 Sb 2 Te 5  based PCM cell also shows one order of magnitude faster SET operation speed compared to that of the Ge 2 Sb 2 Te 5  based one. The enhancements may be caused by substantially increased concentration of TiTe 2  nano-lamellae in crystalline Ti 1 Sb 2 Te 5  phase. The highly electrical conduction and lowly thermal dissipation of the TiTe 2  nano-lamellae play a major role in enhancing the thermal efficiency of the amorphization, prompting the low-energy RESET operation. Our work may inspire the interests to more thorough understanding and tailoring of the nature of the (TiTe 2 ) n (Sb 2 Te 3 ) m  pseudobinary system which will be advantageous to realize high-speed and low-energy PCM applications.

Low-Energy Amorphization of Ti1Sb2Te5 Phase Change Alloy Induced by TiTe2 Nano-Lamellae