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In many semiconductors, compensating defects set doping limits, decreasecarrier mobility, and reduce minority carrier lifetime thus limiting theirutility in devices. Native defects are responsible in many cases, but extrinsicdopants may also act as their own compensation when occupying an alternatelattice site. Suppressing the concentrations of compensating defects duringprocessing close to thermal equilibrium is difficult because formationenthalpies are lowered as the Fermi level moves towards the majority band edge.Excess carriers, introduced for example by photogeneration, modify theformation enthalpy of semiconductor defects and thus can be harnessed duringcrystal growth or annealing to suppress such defect populations. Herein wedevelop a rigorous and general model for defect formation in the presence ofsteady-state excess carrier concentrations by combining the standardquasi-chemical formalism with a detailed-balance description that is applicablefor any defect state in the bandgap. Considering the quasi-Fermi levels aschemical potentials, we demonstrate that increasing the minority carrierconcentration increases the formation enthalpy for typical compensatingcenters, thus suppressing their formation. This effect is illustrated for thespecific example of native GaSb antisite acceptors in nominally un-doped andextrinsically n-type doped GaSb. The model also predicts reductions in theconcentration of ionized scattering centers as well as increased mobility.While our treatment is generalized for excess carrier injection or generationin semiconductors by any means, we provide a set of guidelines for applying theconcept in photoassisted physical vapor deposition.

Suppression of compensating native defect formation during semiconductor processing via excess carriers