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In this paper, a simple and controllable “ wet pulse annealing ” technique for the fabrication of flexible amorphous InGaZnO thin film transistors ( a -IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the  a -IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm 2  V −1  s −1 ; I on /I off  ratio ≈ 10 8 ; reduced I-V hysteresis), comparable to that of  a -IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible  a -IGZO TFT with good electrical and bending performances.

scientific reports

Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness