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Lithium ( Li )-assisted indium oxide ( In   2   O   3  ) thin films with ordered structures were prepared on solution-processed zirconium oxide ( ZrO   2  ) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different  Li  nitrate loadings. It was found that the  Li -assisted  In  precursor films on  ZrO   2   dielectrics could form crystalline structures even at processing temperatures ( T ) below 200 °C. Different  In  oxidation states were observed in the  Li -doped films, and the development of such states was significantly affected by both temperature and the mol% of  Li  cations, [ Li  + ]/([ In   3 + ] + [ Li  + ]), in the precursor solutions. Upon annealing the  Li -assisted precursor films below 200 °C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline  In   2   O   3   nanostructures after thermal dehydration and oxidation. Finally, an  In   2   O   3   film doped with 13.5 mol%  Li  +  and annealed at 250 °C for 1 h exhibited the highest electron mobility of 60 cm 2  V −1  s −1  and an on/off current ratio above 10 8  when utilized in a thin film transistor.

Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor