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Hexagonal boron nitride (h-BN) is a promising material for implementation inspintronics due to a large band gap, low spin-orbit coupling, and a smalllattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) andhcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed atsmall interface scattering of charge and spin carriers. We report on thecontrolled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE).Structural and electronic properties of this system are investigated usingcross-section transmission electron microscopy (TEM) and electronspectroscopies which confirm good agreement with the properties of bulk h-BN.The latter are also corroborated by density functional theory (DFT)calculations, revealing that the first h-BN layer at the interface to Ni ismetallic. Our investigations demonstrate that MBE is a promising, versatilealternative to both the exfoliation approach and chemical vapour deposition ofh-BN.

Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications