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In this study, Bi 2 S 3  sensitive layer has been grown on the surface of WO 3  nanoplate arrays via an  in situ  approach. The characterization of samples were carried out using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and ultraviolet–visible absorption spectroscopy (UV-vis). The results show that the Bi 2 S 3  layer is uniformly formed on the surface of WO 3  nanoplates and less interfacial defects were observed in the interface between the Bi 2 S 3  and WO 3 . More importantly, the Bi 2 S 3 /WO 3  films as photoanodes for photoelectrochemical (PEC) cells display the enhanced PEC performance compared with the Bi 2 S 3 /WO 3  films prepared by a sequential ionic layer adsorption reaction (SILAR) method. In order to understand the reason for the enhanced PEC properties, the electron transport properties of the photoelectrodes were studied by using the transient photocurrent spectroscopy and intensity modulated photocurrent spectroscopy (IMPS). The Bi 2 S 3 /WO 3  films prepared via an  in situ  approach have a greater transient time constant and higher electron transit rate. This is most likely due to less interfacial defects for the Bi 2 S 3 /WO 3  films prepared via an  in situ  approach, resulting in a lower resistance and faster carrier transport in the interface between WO 3  and Bi 2 S 3 .

In situ synthesis of Bi2S3 sensitized WO3 nanoplate arrays with less interfacial defects and enhanced photoelectrochemical performance