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Two-dimensional (2D) group-III-V honeycomb films have attracted significantinterest for their potential application in fields of quantum computing andnanoeletronics. Searching for 2D III-V films with high structural stability andlarge-gap are crucial for the realizations of dissipationless transport edgestates using quantum spin Hall (QSH) effect. Based on first-principlescalculations, we predict that the methyl-functionalized InBi monolayer(InBiCH3) has no dynamic instability, and host a QSH state with a band gap aslarge as 0.29 eV, exhibiting an interesting electronic behavior viable forroom-temperature applications. The topological characteristic is confirmed bys-pxy bands inversion, topological invariant Z2 number, and the time-reversalsymmetry protected helical edge states. Noticeably, the QSH states are tunableand robust against the mechanical strain, electric field and different levelsof methyl coverages. We also find that InBiCH3 supported on h-BN substratemaintains a nontrivial QSH state, which harbors the edge states lying withinthe band gap of substrate. These findings demonstrate that themethyl-functionalized III-V films may be a good QSH platform for device designand fabrication in spintronics.

Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film