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The understanding of spin dynamics and relaxation mechanisms in cleangraphene and the upper time and length scales on which spin devices can operateare prerequisites to realizing graphene spintronic technologies. Here wetheoretically reveal the nature of fundamental spin relaxation mechanisms inclean graphene on different substrates with spin-orbit Rashba fields as low asa few tens of micron eV. Spin lifetimes ranging from 50 picoseconds up toseveral nanoseconds are found to be dictated by substrate-induced electron-holecharacteristics. A crossover in the spin relaxation mechanism from aDyakonov-Perel type for SiO2 substrates to a broadening-induced dephasing forhBN substrates is described. The energy dependence of spin lifetimes, theirratio for spins pointing out-of-plane and in-plane, and the scaling withdisorder provide a global picture about spin dynamics and relaxation inultraclean graphene in presence of electron-hole puddles.

Spin Dynamics and Relaxation in Graphene Dictated by Electron-hole Puddles