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Fulfillment of the promise of transparent electronics has been hindered untilnow largely by the lack of semiconductors that can be doped p-type in a stableway, and that at the same time present high hole mobility and are highlytransparent in the visible spectrum. Here, a high-throughput study based onfirst-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr,Nd, and Gd, which are unique in that they exhibit excellent characteristics fortransparent electronic device applications-i.e., a direct band gap larger than3.1 eV, an average hole effective mass below the electron rest mass, and goodp-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Naimpurities substituting La are shallow acceptors in moderate to stronganion-rich growth conditions, with low formation energy, and that they will notbe compensated by anion vacancies VO or VSe.

Easily doped p-type, low hole effective mass, transparent oxides