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Tuning the lattice strain ( ε  L ) is a novel approach to manipulate the magnetic, electronic, and transport properties of spintronic materials. Achievable  ε  L  in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile and well below 1%. Such limits in the tuning capability cannot meet the requirements for nonvolatile applications of spintronic materials. This study answers to the challenge of introducing significant amount of elastic strain in deposited thin films so that noticeable tuning of the spintronic characteristics can be realized. Based on subtle elastic strain engineering of depositing L1 0 -FePt films on pre-stretched NiTi(Nb) shape memory alloy substrates, steerable and nonvolatile lattice strain up to 2.18% has been achieved in the L1 0 -FePt films by thermally controlling the shape memory effect of the substrates. Introduced strains at this level significantly modify the electronic density of state, orbital overlap, and spin-orbit coupling (SOC) strength in the FePt film, leading to nonvolatile modulation of magnetic anisotropy and magnetization reversal characteristics. This finding not only opens an efficient avenue for the nonvolatile tuning of SOC based magnetism and spintronic effects, but also helps to clarify the physical nature of pure strain effect.

Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates