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Layered inorganic materials, such as the transition metal dichalcogenides(TMDs), have attracted much attention due to their exceptional electronic andoptical properties. Reliable synthesis and characterization of these materialsmust be developed if these properties are to be exploited. Herein, we presentlow-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemicalvapour deposition (CVD). Raman spectra are acquired over large areas allowingchanges in the position and intensity of the shear and layer-breathing modes tobe visualized in maps. This allows detailed characterization of mono- andfew-layered TMDs which is complementary to well-established (high-frequency)Raman and photoluminescence spectroscopy. This study presents a major steppingstone in fundamental understanding of layered materials as mapping thelow-frequency modes allows the quality, symmetry, stacking configuration andlayer number of 2D materials to be probed over large areas. In addition, wereport on anomalous resonance effects in the low-frequency region of the WS2Raman spectrum.

Mapping of Low-Frequency Raman Modes in CVD-Grown Transition Metal Dichalcogenides: Layer Number, Stacking Orientation and Resonant Effects