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The search for quantum spin Hall (QSH) insulators with high stability, large and tunable gap and topological robustness, is critical for their realistic application at high temperature. Using first-principle calculations, we predict the cyanogen saturated stanene SnCN as novel topological insulators material, with a bulk gap as large as 203 meV, which can be engineered by applying biaxial strain and electric field. The band topology is identified by Z 2  topological invariant together with helical edge states, and the mechanism is  s-p  xy  band inversion at G point induced by spin-orbit coupling (SOC). Remarkably, these systems have robust topology against chemical impurities, based on the calculations on halogen and cyano group co-decorated stanene SnX x X′1 −x  (X,X′  =  F, Cl, Br, I and CN), which makes it an appropriate and flexible candidate material for spintronic devices.

Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature