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Two-dimensional MoS 2  is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS 2 . In this work, we investigate the controllable growth of monolayer MoS 2  evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS 2 , which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS 2  larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS 2  assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS 2  from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film