English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The structural, electronic, transport and optical properties of black phosphorus/MoS 2  (BP/MoS 2 ) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS 2  bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS 2  bilayer also exhibits modulation of its carrier effective mass and carrier concentration by the applied compressive strain, suggesting that mobility engineering and good piezoelectric effect can be realized in BP/MoS 2  heterostructure. Because the type-II band alignment can facilitate the separation of photo-excited electrons and holes, and it can benefit from the great absorption coefficient in ultra-violet region, the BP/MoS 2  shows great potential to be a very efficient ultra-violet photodetector.

Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure