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Thin film growth of iron chalcogenides by pulsed laser deposition (PLD) isstill a delicate issue in terms of simultaneous control of stoichiometry,texture, substrate/film interface properties, and superconducting properties.The high volatility of the constituents sharply limits optimal depositiontemperatures to a narrow window and mainly challenges reproducibility forvacuum based methods. In this work we demonstrate the beneficial introductionof a semiconducting FeSe$_{1\text{--}x}$Te$_x$ seed layer for subsequenthomoepitaxial growth of superconducting FeSe$_{1\text{--}x}$Te$_x$ thin film onMgO substrates. MgO is one of the most favorable substrates used insuperconducting thin film applications, but the controlled growth of ironchalcogenide thin films on MgO has not yet been optimized and is the leastunderstood. The large mismatch between the lattice constants of MgO andFeSe$_{1\text{--}x}$Te$_x$ of about 11% results in thin films with a mixedtexture, that prevents further accurate investigations of a correlation betweenstructural and electrical properties of FeSe$_{1\text{--}x}$Te$_x$. Here wepresent an effective way to significantly improve epitaxial growth ofsuperconducting FeSe$_{1\text{--}x}$Te$_x$ thin films with reproducible highcritical temperatures ($\geq$ 17 K) at reduced deposition temperatures (200{\deg}C - 320 {\deg}C) on MgO using PLD. This offers a broad scope of variousapplications.

Interface control by homoepitaxial growth in pulsed laser deposited iron chalcogenide thin ilms