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We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn 1−2 x  Mn  x  Cu  x  ) 2 As 2with the crystal structure identical to that of “122” family iron based superconductors and the antiferromagnet BaMn 2 As 2 . No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn 2 As 2 . Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below  T   C   ~ 70 K, followed by a magnetic glassy transition at  T   f    ~ 35 K. AC susceptibility measurements for Ba(Zn 0.75 Mn 0.125 Cu 0.125 ) 2 As 2  reveal that  T   f   strongly depends on the applied frequency withand a DC magnetic field dependence of, demonstrating that a spin glass transition takes place at  T   f  . As large as −53% negative magnetoresistance has been observed in Ba(Zn 1−2 x  Mn  x  Cu  x  ) 2 As 2 , enabling its possible application in memory devices.

Ba(Zn1−2xMnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn Sites