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MoS 2  is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS 2 /bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS 2 /bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS 2  toward that of bulk semiconductor, lowering the barrier height of the formed junction. Herein, we introduce hexagonal boron nitride (h-BN) into MoS 2 /GaAs heterostructure to suppress the static charge transfer, and the obtained MoS 2 /h-BN/GaAs solar cell exhibits an improved power conversion efficiency of 5.42%. More importantly, the sandwiched h-BN makes the Fermi level tuning of MoS 2  more effective. By employing chemical doping and electrical gating into the solar cell device, PCE of 9.03% is achieved, which is the highest among all the reported monolayer transition metal dichalcogenide based solar cells.

Interface designed MoS2/GaAs heterostructure solar cell with sandwich stacked hexagonal boron nitride