English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen defects. Results show that the recovery process after illumination stress is persistently slow by virtue of defect states with a broad range, 0.85 eV to 1.38 eV, suggesting the presence of ionized oxygen vacancies and interstitials. We also rule out charge trapping/detrapping events since this requires a much smaller activation energy ~0.53 eV, and which tends to be much quicker. These arguments are supported by measurements using a novel gate-pulse spectroscopy probing technique that reveals the post-stress ionized oxygen defect profile, including anti-bonding states within the conduction band.

Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy