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By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a  p  + -Si/ p -Si/ β -FeSi 2  nanocrystallites/ n -Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3–4 and 15–20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10 9  cm × Hz 1/2 /W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of  β -FeSi 2  nanocrystallites into the depletion region of the Si  p-n  junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si  p-n  junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of  β -FeSi 2 .

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites