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The La 2/3 Ba 1/3 MnO 3  film is deposited in a CMOS-compatible Pt/Ti/SiO 2 /Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La 2/3 Ba 1/3 MnO 3 /Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn 3+ -O 2− -Mn 4+ - chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La 2/3 Ba 1/3 MnO 3 /Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.

Electric field modification of magnetism in Au/La2/3Ba1/3MnO3/Pt device