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To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4′, 4″ -tris[3-methylphenyl(phenyl)amino]triphenylamine (m-MTDATA) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB), the efficient charge injection and transporting, barrier-free hole-electron recombination for the formation of the interfacial exciplex, and elimination of charge traps of phosphors in the emissive layer are realized simultaneously, resulting in a turn-on voltage of 2.36 V, a record high PE of 97.2 lm W −1 , as well as extremely low driving voltage of 2.60 V at 100 cd m −2 , 3.03 V at 1000 cd m −2  and 4.08 V at 10000 cd m −2 . This report is the first time that the PE performance of s-PhOLED approaches 100 lm W −1  high level, even superior to the corresponding state-of-the-art performance of the same color vacuum-deposited PhOLED (v-PhOLED) counterpart. We anticipate this report opens a new avenue for achieving power efficient monochromatic and white s-PhOLEDs with simple structures.

Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency