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The lack of suitable quantum emitters in silicon and silicon-based materialshas prevented the realization of room temperature, compact, stable, andintegrated sources of single photons in a scalable on-chip architecture, sofar. Current approaches rely on exploiting the enhanced optical nonlinearity ofsilicon through light confinement or slow-light propagation, and are based onparametric processes that typically require substantial input energy andspatial footprint to reach a reasonable output yield. Here we propose analternative all-silicon device that employs a different paradigm, namely theinterplay between quantum interference and the third-order intrinsicnonlinearity in a system of two coupled optical cavities. This unconventionalphoton blockade allows to produce antibunched radiation at extremely low inputpowers. We demonstrate a reliable protocol to operate this mechanism underpulsed optical excitation, as required for device applications, thusimplementing a true single-photon source. We finally propose a state-of-artimplementation in a standard silicon-based photonic crystal integrated circuitthat outperforms existing parametric devices either in input power or footprintarea.

An all-silicon single-photon source by unconventional photon blockade