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Sb 2 (S 1−x Se x ) 3  (0 ≤ x ≤ 1) compounds have been proposed as promising light-absorbing materials for photovoltaic device applications. However, no systematic study on the synthesis and characterization of polycrystalline Sb 2 (S 1−x Se x ) 3  thin films has been reported. Here, using a hydrazine based solution process, single-phase Sb 2 (S 1−x Se x ) 3  films were successfully obtained. Through Raman spectroscopy, we have investigated the dissolution mechanism of Sb in hydrazine: 1) the reaction between Sb and S/Se yields [Sb 4 S 7 ] 2- /[Sb 4 Se 7 ] 2-  ions within their respective solutions; 2) in the Sb-S-Se precursor solutions, Sb, S, and Se were mixed on a molecular level, facilitating the formation of highly uniform polycrystalline Sb 2 (S 1−x Se x ) 3  thin films at a relatively low temperature. UV-vis-NIR transmission spectroscopy revealed that the band gap of Sb 2 (S 1−x Se x ) 3  alloy films had a quadratical relationship with the Se concentration x and it followed the equation, where the bowing parameter was 0.118 eV. Our study provides a valuable guidance for the adjustment and optimization of the band gap in hydrazine solution processed Sb 2 (S 1−x Se x ) 3  alloy films for the future fabrication of improved photovoltaic devices.

Hydrazine solution processed Sb2S3, Sb2Se3 and Sb2(S1−xSex)3 film: molecular precursor identification, film fabrication and band gap tuning