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By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn  p -type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote  p -type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote  p -type doping.

Remote p-type Doping in GaSb/InAs Core-shell Nanowires