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We investigate the local surface potential and Raman characteristics of as-grown and  ex-situ  hydrogen intercalated quasi-free standing graphene on 4 H -SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accompanied by a more than three-fold increase in carrier mobility, up to  μ   h   ≈ 4540 cm 2  V −1  s −1 . On a local scale, Kelvin probe force microscopy provides a complete and detailed map of the surface potential distribution of graphene domains of different thicknesses. Rearrangement of graphene layers upon intercalation to ( n  + 1)LG, where n is the number of graphene layers (LG) before intercalation, is demonstrated. This is accompanied by a significant increase in the work function of the graphene after the H 2 -intercalation, which confirms the change of majority carriers from electrons to holes. Raman spectroscopy and mapping corroborate surface potential studies.

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties