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Surface potential measurement on atomically thin MoS 2  flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS 2  thin flakes. Schottky diode devices using mono- and multi- layer MoS 2  channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS 2  thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH 3  and NO 2  gases based on the metal work function and the Schottky barrier height change.

Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts