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Freestanding silicene, a monolayer of Si arranged in a honeycomb structure,has been predicted to give rise to massless Dirac fermions, akin to graphene.However, Si structures grown on a supporting substrate can show properties thatstrongly deviate from the freestanding case. Here, combining scanning tunnelingmicroscopy/spectroscopy and differential conductance mapping, we show that theelectrical properties of the ($\sqrt{3}\times\sqrt{3}$) phase of few-layer Sigrown on Ag(111) strongly depend on film thickness, where the electron phasecoherence length decreases and the free-electron-like surface state graduallydiminishes when approaching the interface. These features are presumablyattributable to the inelastic inter-band electron-electron scatteringoriginating from the overlap between the surface state, interface state and thebulk state of the substrate. We further demonstrate that the intrinsicelectronic structure of the as grown ($\sqrt{3}\times\sqrt{3}$) phase isidentical to that of the ($\sqrt{3}\times\sqrt{3}$)R$30^{\circ}$ reconstructedAg on Si(111), both of which exhibit the parabolic energy-momentum dispersionrelation with comparable electron effective masses. These findings highlightthe essential role of interfacial coupling on the properties of two-dimensionalSi structures grown on supporting substrates, which should be thoroughlyscrutinized in pursuit of silicene.

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature