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The KMg 4 (PO 4 ) 3 :Eu 2+  phosphor was prepared by the conventional high temperature solid-state reaction. The crystal structure, luminescence and reflectance spectra, thermal stability, quantum efficiency and the application for N-UV LED were studied respectively. The phase formation and crystal structure of KMg 4 (PO 4 ) 3 :Eu 2+  were confirmed from the powder X-ray diffraction and the Rietveld refinement. The concentration quenching of Eu 2+  in the KMg 4 (PO 4 ) 3  host was determined to be 1mol% and the quenching mechanism was certified to be the dipole–dipole interaction. The energy transfer critical distance of as-prepared phosphor was calculated to be about 35.84Å. Furthermore, the phosphor exhibited good thermal stability and the corresponding activation energy Δ E  was reckoned to be 0.24eV. Upon excitation at 365nm, the internal quantum efficiency of the optimized KMg 4 (PO 4 ) 3 :Eu 2+  was estimated to be 50.44%. The white N-UV LEDs was fabricated via KMg 4 (PO 4 ) 3 :Eu 2+ , green-emitting (Ba,Sr) 2 SiO 4 :Eu 2+ , and red-emitting CaAlSiN 3 :Eu 2+  phosphors with a near-UV chip. The excellent color rendering index (Ra = 96) at a correlated color temperature (5227.08K) with CIE coordinates of  x  = 0.34,  y  = 0.35 of the WLED device indicates that KMg 4 (PO 4 ) 3 :Eu 2+  is a promising blue-emitting phosphor for white N-UV light emitting diodes (LEDs).

Crystal structure and Temperature-Dependent Luminescence Characteristics of KMg4(PO4)3:Eu2+ phosphor for White Light-emitting diodes