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A long-standing goal of computer technology is to process and store digitalinformation with the same device in order to implement new architectures. Oneway to accomplish this is to use nanomagnetic `non-volatile' logic gates thatcan perform Boolean operations and then store the output data in themagnetization states of nanomagnets, thereby doubling as both logic and memory.Unfortunately, many proposed nanomagnetic gates do not possess the sevenessential characteristics of a Boolean logic gate: concatenability,non-linearity, isolation between input and output, gain, universal logicimplementation, scalability and error resilience. More importantly, theirenergy-delay products and error-rates vastly exceed that of conventionaltransistor-based logic gates, which is a drawback. Here, we propose anon-volatile voltage-controlled nanomagnetic logic gate that possesses all thenecessary characteristics of a logic gate and whose energy-delay product is ~2orders of magnitude less than that of other nano-magnetic (non-volatile) logicgates and ~1 order of magnitude less than that of (volatile) CMOS-based logicgates. The error-resilience is also superior to that of other knownnanomagnetic gates.Comment: There were some typographical errors in version 2 which have been  correcte

Correction: Corrigendum: An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product