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Chalcogen-hyperdoped silicon shows potential applications in silicon-basedinfrared photodetectors and intermediate band solar cells. Due to the low solidsolubility limits of chalcogen elements in silicon, these materials werepreviously realized by femtosecond or nanosecond laser annealing of implantedsilicon or bare silicon in certain background gases. The high energy densitydeposited on the silicon surface leads to a liquid phase and the fastrecrystallization velocity allows trapping of chalcogen into the siliconmatrix. However, this method encounters the problem of surface segregation. Inthis paper, we propose a solid phase processing by flash-lamp annealing in themillisecond range, which is in between the conventional rapid thermal annealingand pulsed laser annealing. Flash lamp annealed selenium-implanted siliconshows a substitutional fraction of around 70% with an implanted concentrationup to 2.3%. The resistivity is lower and the carrier mobility is higher thanthose of nanosecond pulsed laser annealed samples. Our results show thatflash-lamp annealing is superior to laser annealing in preventing surfacesegregation and in allowing scalability.

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy