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Charge transport in MoS2 in the low carrier density regime is dominated bytrap states and band edge disorder. The intrinsic transport properties of MoS2emerge in the high density regime where conduction occurs via extended states.Here, we investigate the transport properties of mechanically exfoliated mono-,bi-, and trilayer MoS2 sheets over a wide range of carrier densities realizedby a combination of ion gel top gate and SiO2 back gate which allows us toachieve high charge carrier (>10^13) density. We discuss the gating propertiesof the devices as a function of layer thickness and demonstrate resistivitiesof as low as 1 k{\Omega} for monolayer and 420{\Omega} for bilayer devices at10 K. We show that from the capacitive coupling of the two gates, quantumcapacitance can be roughly estimated to be on the order of 1 {\mu}F/cm^2 forall devices studied. Temperature dependence of the carrier mobility in the highdensity regime indicates that short-range scatterers limit charge transport atlow temperatures.

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors