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Heat has always been a killing matter for traditional semiconductor machines.The underlining physical reason is that the intrinsic carrier density of adevice made from a traditional semiconductor material increases very fast witha rising temperature. Once reaching a temperature, the density surpasses thechemical doping or gating effect, any p-n junction or transistor made from thesemiconductor will fail to function. Here, we measure the intrinsic Fermi level(|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2),carrier drift velocity, and G mode phonon energy of graphene devices and theirtemperature dependencies up to 2400 K. Our results show intrinsic carrierdensity of graphene is an order of magnitude less sensitive to temperature thanthose of Si or Ge, and reveal the great potentials of graphene as a materialfor high temperature devices. We also observe a linear decline of saturationdrift velocity with increasing temperature, and identify the temperaturecoefficients of the intrinsic G mode phonon energy. Above knowledge is vital inunderstanding the physical phenomena of graphene under high power or hightemperature.

Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy