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The dependence of the Raman spectrum on the excitation energy has beeninvestigated for ABA-and ABC- stacked few-layer graphene in order to establishthe fingerprint of the stacking order and the number of layers, which affectthe transport and optical properties of few-layer graphene. Five differentexcitation sources with energies of 1.96, 2.33, 2.41, 2.54 and 2.81 eV wereused. The position and the line shape of the Raman 2D, G*, N, M, and othercombination modes show dependence on the excitation energy as well as thestacking order and the thickness. One can unambiguously determine the stackingorder and the thickness by comparing the 2D band spectra measured with 2different excitation energies or by carefully comparing weaker combinationRaman modes such as N, M, or LOLA modes. The criteria for unambiguousdetermination of the stacking order and the number of layers up to 5 layers areestablished.

Excitation Energy Dependent Raman Signatures of ABA- and ABC-stacked Few-layer Graphene