English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn 2 SnO 4 -sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol–gel approach followed by post-annealing. The back-to-back bipolar RS properties were observed in the Ohmic contact two-terminal devices based on individual core/shell nanowires. With increasing bias to about 1.5 V, it changes from high-resistance states (HRS) to low-resistance states, and however, it can be restored to HRS by reverse bias. We propose a new mechanism, which is attributed to the injection of electrons into/from interfacial states, arising from the lattice mismatch at ZnO/Zn 2 SnO 4  heterointerface. Upon applying negative/positive voltage at one end of devices, where interfacial states are filled/emptied, barrier will be eliminated/created, resulting into symmetric RS characteristics. The behavior of storage and removal charges demonstrates that the heterostructures have excellent properties for the application in resistance random access memory.

Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states