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Implementing spin functionalities in Si, and understanding the fundamentalprocesses of spin injection and detection, are the main challenges inspintronics. Here we demonstrate large spin polarizations at room temperature,34% in n-type and 10% in p-type degenerate Si bands, using a narrow Schottkyand a SiO2 tunnel barrier in a direct tunneling regime. Furthermore, byincreasing the width of the Schottky barrier in non-degenerate p-type Si, weobserved a systematic sign reversal of the Hanle signal in the low bias regime.This dramatic change in the spin injection and detection processes withincreased Schottky barrier resistance may be due to a decoupling of the spinsin the interface states from the bulk band of Si, yielding a transition from adirect to a localized state assisted tunneling. Our study provides a deeperinsight into the spin transport phenomenon, which should be considered forelectrical spin injection into any semiconductor.

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier