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The controlled manipulation of the charge carrier concentration in nanometerthin layers is the basis of current semiconductor technology and of fundamentalimportance for device applications. Here we show that it is possible to inducea persistent inversion from n- to p-type in a 200-nm-thick surface layer of agermanium wafer by illumination with white and blue light. We induce theinversion with a half-life of ~12 hours at a temperature of 220 K whichdisappears above 280 K. The photo-induced inversion is absent for a sample witha 20-nm-thick gold capping layer providing a Schottky barrier at the interface.This indicates that charge accumulation at the surface is essential to explainthe observed inversion. The contactless change of carrier concentration ispotentially interesting for device applications in opto-electronics where thegate electrode and gate oxide could be replaced by the semiconductor surface.

Photo-induced persistent inversion of germanium in a 200-nm-deep surface region