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The fundamental properties of valleys are recently attracting growingattention due to electrons in new and topical materials possessing thisdegree-of-freedom and recent proposals for val-leytronics devices. In siliconMOSFETs, the interest has a longer history since the valley degree of freedomhad been identified as a key parameter in the observation of the controversial"metallic behaviour" in two dimensions. However, while it has been recentlydemonstrated that lifting valley degeneracy can destroy the metallic behaviour,little is known about the role of intervalley scattering. Here, we show thatthe metallic behaviour can be observed in the presence of strong interval-leyscattering in silicon on insulator (SOI) quantum wells. Analysis of theconductivity in terms of quantum corrections reveals that interactions are muchstronger in SOI than in conventional MOSFETs, leading to the metallic behaviourdespite the strong intervalley scattering. The prospect of manipulating thevalley degree of freedom in materials like AlAs, 1 silicon 2--4 graphene,

Metallic behaviour in SOI quantum wells with strong intervalley scattering