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The gapped Dirac-like surface states of compensated magnetic topologicalinsulator MnBi$_{2-x}$Sb$_x$Te$_4$ (MBST) are a promising host for exoticquantum phenomena such as the quantum anomalous Hall effect and axioninsulating states. However, it has become clear that atomic defects underminethe stabilization of such quantum phases as they lead to spatial variations inthe surface state gap and doping levels. The large number of possible defectconfigurations in MBST make studying the influence of individual defectsvirtually impossible. Here, we present a statistical analysis of the nanoscaleeffect of defects in MBST with $x=0.64$, by scanning tunnelingmicroscopy/spectroscopy (STM/S). We identify (Bi,Sb)$_{\rm Mn}$ anti-sitedefects to be the main source of the observed doping fluctuations, leadingtowards the formation of nanoscale charge puddles and effectively closing thetransport gap. Our findings will guide further optimization of this materialsystem via defect engineering, to enable exploitation of its promisingproperties.

Anti-site defect-induced disorder in compensated topological magnet MnBi$_{2-x}$Sb$_x$Te$_4$