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Recently, it was argued that a ferromagnetic (FM) insulating phase can beinduced by a novel {\it interorbital} hopping mechanism. Here, we study thestability range of this novel FM phase under modifications in the crystalfields and electronic correlation strength, constructing a theoretical phasediagram. A plethora of states is unveiled, including the FM Mott insulator(MI), a FM orbital-selective Mott phase (OSMP), several anferromagnetic (AFM)MI phases, an AFM metallic state, and a FM metal as well. Our most interestingresult is that the FM regime, either in MI or OSMP forms, is shown to be stablein {\it large} portions of the phase diagram, at both intermediate and strongelectronic correlations, respectively. Our results demonstrate via a detailedexample that the recently proposed novel mechanism to stabilize FM insulatorsis not fragile but instead robust, and may enlarge substantially the relativelysmall family of known FM insulators.

Stability of the novel interorbital-hopping mechanism for ferromagnetism in multi-orbital Hubbard models