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Carrier doping by the electric field effect has emerged recently as an idealroute for monitoring many-body physics in two-dimensional (2D) materials wherethe Fermi level is tuned in a way that -- indirectly -- the strength of theinteractions can also be scanned. The possibility of systematic doping incombination with high resolution photoemission has allowed to uncover agenuinely many-body electron spectrum in single-layer MoS2 transition metaldichalcogenide, resolving three clear quasi-particle states, where only onestate should be expected if the electron-phonon interaction vanished. Ouranalysis combines first-principles and consistent complex plane analyticapproaches and brings into light the presence and the physical origin of twogaps and the three quasi-particle bands which are unambiguously present in thephotoemission spectrum. One of these states, though being strongly interactingwith the accompanying virtual phonon cloud, presents a notably long lifetimewhich is an appealing property when trying to understand and take advantage ofmany-body interactions to modulate the transport properties.

Long living carriers in a strong electron-phonon interacting two-dimensional doped semiconductor