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A new mechanism for memristive switching in 2D materials is throughelectric-field controllable electronic/structural phase transitions, but thesedevices have not outperformed status quo 2D memristors. Here, we report ahigh-performance bipolar phase change memristor from strain engineeredmultilayer 1T'-MoTe$_{2}$ that now surpasses the performance metrics (on/offratio, switching voltage, switching speed) of all 2D memristive devices,achieved without forming steps. Using process-induced strain engineering, wedirectly pattern stressed metallic contacts to induce a semimetallic tosemiconducting phase transition in MoTe2 forming a self-aligned verticaltransport memristor with semiconducting MoTe$_{2}$ as the active region. Thesedevices utilize strain to bring them closer to the phase transition boundaryand achieve ultra-low ~90 mV switching voltage, ultra-high ~10$^8$ on/offratio, 5 ns switching, and retention of over 10$^5$ s. Engineered tunability ofthe device switching voltage and on/off ratio is also achieved by varying thesingle process parameter of contact metal film force (film stress $\times$ filmthickness).

Strain Engineering for High-Performance Phase Change Memristors