English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In order to continue to improve integrated circuit performance andfunctionality, scaled transistors with short channel lengths and low thicknessare needed. But the further scaling of silicon-based devices and thedevelopment of alternative semiconductor channel materials that are compatiblewith current fabrication processes is challenging. Here we reportatomic-layer-deposited indium oxide transistors with channel lengths down to 8nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxidethickness down to 0.84 nm. Due to the scaled device dimensions and low contactresistance, the devices exhibit high on-state currents of 3.1 A/mm at a drainvoltage of 0.5 V and a transconductance of 1.5 S/mm at a drain voltage 1 V. Ourdevices are a promising alternative channel material for scaled transistorswith back-end-of-line processing compatibility.

Scaled indium oxide transistors fabricated using atomic layer deposition