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Hydrogen resist lithography using the tip of a scanning tunneling microscope(STM) is employed for patterning p-type nanostructures in silicon. For this,the carrier density and mobility of boron $\delta$-layers, fabricated bygas-phase doping, are characterized with low-temperature transport experiments.Sheet resistivities as low as $300\thinspace\Omega$ are found. Adsorption,incorporation and surface diffusion of the dopants are investigated by STMimaging and result in an upper bound of 2\,nm for the lithographic resolutionwhich is also corroborated by fabricating a 7.5\,nm wide p-type nanowire andmeasuring its electrical properties. Finally, to demonstrate the feasibility ofbipolar dopant device fabrication with this technique, we prepared a 100\,nmwide pn junction and show that its electrical behavior is similar to that of anEsaki diode.

P-type $\delta$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication