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Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimatescaling limit place the utmost demands on the properties of all materialsinvolved. The requirements for semiconductors are well explored and couldpossibly be satisfied by a number of layered two-dimensional (2D) materials,like for example transition-metal dichalcogenides or black phosphorus. Therequirements for the gate insulator are arguably even more challenging anddifficult to meet. In particular the combination of insulator to semiconductorwhich forms the central element of the metal oxide semiconductor field effecttransistor (MOSFET) has to be of superior quality in order to build competitivedevices. At the moment, hexagonal boron nitride (hBN) is the most commontwo-dimensional insulator and widely considered to be the most promising gateinsulator in nanoscaled 2D material-based transistors. Here, we criticallyassess the material parameters of hBN and conclude that while its propertiesrender hBN an ideal candidate for many applications in 2D nanoelectronics, hBNis most likely not suitable as a gate insulator for ultrascaled CMOS devices.

On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices