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Ultrathin single-nm channels of transparent metal oxides offer unparalleled opportunities for boosting the performance of low power, multifunctional thin-film electronics. Here we report a scalable and low-temperature liquid metal printing (LMP) process for unlocking the ultrahigh mobility of 2-dimensional (2D) InO x . These continuous nanosheets are rapidly (60 cm s −1 ) printed over large areas (30 cm 2 ) directly from the native oxide skin spontaneously formed on molten indium. These nanocrystalline LMP InO x  films exhibit unique 2D grain morphologies leading to exceptional conductivity  as deposited . Quantum confinement and low-temperature oxidative postannealing control the band structure and electronic density of states of the 2D InO x  channels, yielding thin-film transistors with ultrahigh mobility (μ 0  = 67 cm 2  V −1 s −1 ), excellent current saturation, and low hysteresis at temperatures down to 165 °C. This work establishes LMP 2D InO x  as an ideal low-temperature transistor technology for high-performance, large area electronics such as flexible displays, active interposers, and thin-film sensors.

2D transistors rapidly printed from the crystalline oxide skin of molten indium