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We propose a realizable device design for an all-electrical robust valleyfilter that utilizes spin protected topological interface states hosted onmonolayer 2D-Xene materials with large intrinsic spin-orbit coupling. Incontrast with conventional quantum spin-Hall edge states localized around the$X$-points, the interface states appearing at the domain wall betweentopologically distinct phases are either from the $K$ or $K^{'}$ points, makingthem suitable prospects for serving as valley-polarized channels. We show thatthe presence of a large band-gap quantum spin Hall effect enables the spatialseparation of the spin-valley locked helical interface states with the valleystates being protected by spin conservation, leading to a robustness againstshort-range non-magnetic disorder. By adopting the scattering matrix formalismon a suitably designed device structure, valley-resolved transport in thepresence of non-magnetic short-range disorder for different 2D-Xene materialsis also analyzed in detail. Our numerical simulations confirm the role ofspin-orbit coupling in achieving an improved valley filter performance with aperfect quantum of conductance attributed to the topologically protectedinterface states. Our analysis further elaborates clearly the right choice ofmaterial, device geometry and other factors that need to be considered whiledesigning an optimized valleytronic filter device.

Robust all-electrical topological valley filtering using monolayer 2D-Xenes