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Two-dimensional (2D) semiconductors are promising channel materials fornext-generation field-effect transistors (FETs) thanks to their uniquemechanical properties and enhanced electrostatic control. However, theperformance of these devices can be strongly limited by the scatteringprocesses between carriers and phonons, usually occurring at high rates in 2Dmaterials. Here, we use quantum transport simulations calibrated onfirst-principle computations to report on dissipative transport in antimoneneand arsenene $n$-type FETs at the scaling limit. We show that the widely-usedapproximations of either ballistic transport or simple acoustic deformationpotential scattering result in large overestimation of the ON current, due toneglecting the dominant intervalley and optical phonon scattering processes. Weadditionally investigate valley engineering strategy [Nano Lett. \textbf{19},3723 (2019)] to improve the device performance by removing the valleydegeneracy and suppressing most of the intervalley scattering channels via anuniaxial strain along the zigzag direction. The method is applicable to othersimilar 2D semiconductors characterized by multivalley transport.

Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors