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Despite intensive studies on van der Waals heterostructures based on two-dimensional layered materials, isotype vdW heterojunctions, which consist of two different semiconductors with the same majority carrier, have received little attention. We demonstrate an n–n isotype field-effect heterojunction device composed of multilayer moly ditelluride (MoTe 2 ) and tin disulfide (SnS 2 ). The carrier transport flowing through the n-MoTe 2 /n-SnS 2  heterojunction exhibits a clear rectifying behavior exceeding 10 3 , even at a moderate source–drain voltage of 1 V in ambient environment. Owing to the large band offsets between the two materials, a potential barrier exceeding ~1 eV is formed, which is verified by comparing a numerical solution of Poisson’s equation and experimental data. In contrast to the conventional p–n heterostructure operating by diffusion of the minority carrier, we identify the carrier transport is governed by the majority carrier via the thermionic emission and tunneling-mediated process through the potential barrier. Furthermore, the gate voltage can completely turn off the device and even enhance the rectification. A ternary inverter based on the isotype MoTe 2 /SnS 2  heterojunction and a SnS 2  channel transistor is demonstrated for potential multivalued logic applications. Our results suggest that the isotype vdW heterojunction will become an able candidate for electronic or optoelectronic devices after suitable band engineering and design optimization.

Gate-switchable rectification in isotype van der Waals heterostructure of multilayer MoTe2/SnS2 with large band offsets