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We present a physics-based circuit-compatible model for double-gatedtwo-dimensional semiconductor based field effect transistors, which providesexplicit expressions for the drain current, terminal charges and intrinsiccapacitances. The drain current model is based on the drift-diffusion mechanismfor the carrier transport and considers Fermi-Dirac statistics coupled with anappropriate field-effect approach. The terminal charge and intrinsiccapacitance models are calculated adopting a Ward-Dutton linear chargepartition scheme that guarantees charge-conservation. It has been implementedin Verilog-A to make it compatible with standard circuit simulators. In orderto benchmark the proposed modeling framework we also present experimental DCand high-frequency measurements of a purposely fabricated monolayer MoS2 FETshowing excellent agreement between the model and the experiment and thusdemonstrating the capabilities of the combined approach to predict theperformance of 2DFETs.

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances